The RIE (Reactive Ion Etching) configured with several process gasses including SF₆ (Sulfur Hexafluoride), CF₄ (tetrafluorometane), O₂ (Oxygen), and Ar (Argon). The system is indicated for dry etching of Si, SiO₂, Si₃N₄, resist residual layer removing, Ar milling and surface activation by O₂ plasma. The RIE has an Alluminum reaction chamber, suitable for long etching processes.